LaAlO3 Wafers 5x5x0.5mm <100> DSP

Code: 645-002

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Specifications:

Material	LaAlO3 crystals	Orientation	＜100＞
Orientation Error	±0.5°	Size	5.0(±0.1)x5(±0.1)mm
Thickness	0.5(±0.05)mm	Surface Finish	DSP
Roughness	Ra<0.5nm	Cleaness and Package	1000 grade clean room, 100 grade bags

Basic Properties:

Crystal Structure	M6(normal temperature) M3(>435℃)	Unit Cell Constant	M6 a=5.357Å c=13.22Å M3 a=3.821Å
Melt Point(℃)	2080	Density	6.52(g/cm³)
Hardness	6-6.5(mohs)	Thermal Expansion	9.4x10^-6/℃
Dielectric Constants	ε=21	Secant Loss(10ghz)	~3×10^-4@300k, ~0.6×10^-4@77k
Color and Appearance	To anneal and conditions differ from brown to brownish	Chemical Stability	Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3pO4
Characteristics	For microwave electron device

LaAlO3 (Lanthanum aluminate) single crystal has a good lattice match to many materials with perovskite structure. It is an excellent wafers for epitaxial growth of high temperature superconductors (HTS) , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

Hangzhou Shalom EO not only provides the stocked standard epi ready LaAlO3 wafers, but also the custom type wafers upon your request.

5x5mm

0.5mm

<100>

DSP

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2 weeks