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1.575mm pitch x 16 element Si Photodiode Coupled with GOS, CsI

Code: SA-PD16A-16-1.575

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Specifications:

  • Wide light spectrum ranges from 350~1100nm with a peak response at ~950nm. 
  • Element size: 1.4(W) x 2.5(H) mm / one element 
  • Element pitch: 1.575mm (x 16 pixels) 
  • Mounted on two sizes of board: 25.4 x 20.0 mm (wide board for low energy), and 25.4 x 10.2 mm (narrow board for high energy) 
  • Supports dual-energy imaging (When used in an upper and lower two-layer combination) 
  • Coupled with a GOS screen for low energy, and a CsI array for high energy
  • Detectable energy range: 30 keV to 200 keV. 
  • Arranging with two or more modules in a row for long-size line detector


Silicon Photodiode Arrays:

Element Pitch 1.575mm
Element Effective Width 1.4mm
Element Effective Length 2.5mm
Number of elements 16
Spectrum Response Range 350-1100nm
Peak Sensitivity Wavelength 950nm
Photosensitivity@550nm Typ. 0.4, Min. 0.36A/W
Dark Current@-10mV Typ. 5, Max. 20pA
Terminal Capacitance@0V, f=10kHz Typ. 41, Max. 50pF

 

GOS Scintillator:

GOS Thickness 0.35mm
GOS Length 25.4mm
GOS Width 3.5mm

 

CsI Scintillator:

CsI Thickness 5.0mm
CsI Length 25.4mm
CsI Width 3.5mm
CsI Element Pitch 1.575mm
CsI Element Width 1.4mm
CsI Element Height 3.1mm
CsI Element Thickness 4.0mm

 

Performance of Scintillators:

Material GOS ceramic (Gd2O2S:Pr) CsI (Tl)(Cesium Iodide)
Peak Emission Wavelength 512nm 550nm
Decay Time 3000ns 1000ns
Refractive Index 2.2 1.79
Afterglow 0.01% @20ms <1% @20ms
Density 7.34 g/cm^3 4.51 g/cm^3
Non-uniformity of Sensitivity +/- 15% +/- 15%



1.575mm pitch x 16 element Si Pohitodiode, Code: SA-PD16A-16-1.575.

Hangzhou Shalom EO offers a series of silicon photodiodes. our standard photodiodes feature 16 elements and could be coupled with GOS, and CsI. 3 standard modules are optional, including 2 modules of 1.575 element pitch and 1 module of  2.5 element pitch. The standard modules each consist of two Si photodiodes, one is coupled with  CsI(Tl), which generates sufficient light output for high-energy detection, and one is coupled with a GOS ceramic scintillation detector, which is assigned for low-energy detection. Two Si PDs in combination complete the detection of energy levels from low to high. Besides the standard versions, we also provide silicon photodiodes coupled with various scintillation materials such as CdWO4, etc. 

Shalom EO’s scintillation detection arrays feature ultra-low dark current, high response speed, and low terminal capacitance, and the photosensitivity spectrum stretches from 350-1100nm, peaking at approx. 950nm. Additionally, this module is compact and lightweight, allowing easy integration, and requires a low maximum reverse voltage.

Drawings:



1.575mm
1x16
CdWO4闪烁体阵列

CdWO4闪烁体阵列

  • 低余辉、高密度、高 Z 闪烁体
  • 相对高的光输出和高抗能量辐射损伤能力
  • 适用于低活度计数应用
  • 可提供 8、16、32、64 个元素的线性阵列和 6×10、12×18、24×36 个元素的二维阵列
  • 最小像素或晶体元素尺寸:0.3mm x 0.3mm
  • 应用说明:安全检查、X 射线 CT、高能物理、核医学
...

CsI(Tl)闪烁体阵列

CsI(Tl)闪烁体阵列

  • 高光输出、强大的阻止能力和机械强度
  • 峰值发射波长为 550nm,与硅光电二极管读出器完美匹配
  • 线性阵列或一维阵列,像素数:1x8、1x16、1x32、1x64、1x128……
  • 二维阵列,像素数:6×10、12×18、24×36……
  • 最小像素或晶体元件尺寸:0.3mmx0.3mm
  • 提供低余辉版本(余辉 0.05~0.39%@2ms),也可定制余辉值
  • CsI(Tl) 闪烁晶体Shalom 也有售EO
...

GOS(Gd2O2S:Pr)闪烁体阵列

GOS(Gd2O2S:Pr)闪烁体阵列

  • 高光输出和高密度,极佳的可加工性
  • 3 ms 时低于 0.1% 的低余辉,优异的防潮性,良好的化学稳定性
  • 与硅光电二极管 (Si PD) 的光谱灵敏度完美匹配
  • 发射峰值光谱范围为 470 ~ 900 nm
  • 最小像素或晶体元件尺寸:0.3mm x 0.3mm
  • 应用:计算机断层扫描 (CT) 扫描仪、安全设备和无损检测系统
...

X射线探测器板

X射线探测器板

  • 基于线性 Si PD 闪烁探测芯片,支持单能量和双能量 X 射线探测
  • 最多 128 个通道,像素间距和尺寸可自定义
  • 常见应用:安全检查、无损检测、食品检测、矿石传感等。
  • 针对您的特定应用进行定制
...